200V BCD process boosts automotive & AI power ICs

Source：SK keyfoundry Release Date：2026-03-06 35

A newly introduced 200V bipolar-CMOS-DMOS (BCD) process technology is designed to advance power ICs for automotive and AI applications. Supporting higher voltages with improved efficiency and reliability, it enables compact, high-performance solutions for electric vehicles, industrial systems, and AI hardware. By combining robust power handling with scalability, this innovation strengthens next-generation designs in mobility and intelligent electronics.

SK keyfoundry has introduced a fourth-generation 0.18-micron 200V high-voltage BCD (Bipolar-CMOS-DMOS) process, expanding its specialty process portfolio for power management and high-voltage applications. The Korea-based 8-inch pure-play foundry said it has begun full-scale product development with domestic and global customers and is targeting mass production within the year.

The new platform arrives as demand accelerates for higher-voltage, higher-efficiency power semiconductors, driven by vehicle electrification and the rapid buildout of AI data center infrastructure. Automotive electrical systems are steadily migrating from traditional 12V architectures to 48V domains, while AI servers and data centers are pushing operating voltages from 380V DC toward 800V DC to improve power density and efficiency. These shifts are increasing the need for process technologies that can reliably handle voltages above 100V while maintaining efficient power control and integration.

According to SK keyfoundry, the fourth-generation 200V BCD process delivers more than a 20% improvement in both specific on-resistance (Rsp) and breakdown voltage (BVDSS) compared with its previous-generation technology. The enhancements are aimed at improving power efficiency and high-temperature robustness—key requirements in automotive and industrial environments.

The process also includes low on-resistance device options optimized for different operating voltages, helping designers reduce chip area and power loss. A Thick inter-metal dielectric (IMD) option is available to support safe digital signal transmission while isolating high-voltage and high-current regions in PMICs that combine BCD and high-voltage MOSFET technologies. This feature is intended to mitigate noise coupling and improve system reliability in mixed-signal, high-voltage designs.

To broaden integration, the platform supports multiple embedded memory options, including SRAM, ROM, MTP, and OTP. It also enables integration of Hall sensors, targeting applications such as precision motor control in automotive and industrial systems.

SK keyfoundry positions the process for a wide range of products, including high-voltage power management and conversion ICs, motor drivers, LED drivers, and power supply gate drivers. The technology is qualified to AEC-Q100 Grade 0, allowing use in automotive electronics that must operate reliably under extreme temperature conditions.

Company executives said demand for BCD processes capable of exceeding 100V is rising quickly, particularly as AI servers and next-generation automotive platforms require higher power levels. They also noted that relatively few foundries currently offer high-voltage BCD technologies on bulk silicon, making the new 200V platform a strategic addition to SK keyfoundry’s specialty process lineup.