Why bringing GaN manufacturing in-house matters more than ever

ROHM is taking a significant step toward strengthening its position in the fast-growing gallium nitride (GaN) market by bringing production of its 650V GaN power devices in-house. The move, enabled by Oxford Instruments' advanced 200 mm plasma Atomic Layer Etch (ALE) technology, gives the Japanese semiconductor manufacturer greater control over manufacturing, quality and supply as demand for high-efficiency power semiconductors continues to rise.

The transition marks an important milestone in ROHM's strategy to establish a fully integrated GaN manufacturing platform. By scaling production to 200 mm wafers, the company aims to improve manufacturing efficiency while preparing for higher-volume output of GaN devices used in electric vehicles, AI data centers, industrial systems and renewable energy applications.

Oxford Instruments' ALE process enables ultra-low-damage, atomic-scale etching with high uniformity and repeatability—critical requirements for producing reliable GaN power devices at scale. The collaboration builds on a research partnership that began several years ago and is now evolving into support for volume manufacturing, highlighting the growing maturity of GaN technology for commercial applications.

GaN semiconductors are increasingly replacing conventional silicon devices in high-performance power electronics thanks to their faster switching speeds, lower energy losses and smaller system footprints. As AI infrastructure, electrified transportation and energy-efficient power systems continue to expand, manufacturers are accelerating investments in advanced GaN production to secure long-term supply and remain competitive in one of the semiconductor industry's fastest-growing segments.